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MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET
e. tion. cifica t to chang c al spe t a fins are subje is no limit is e: Th tric Notice parame Som
P
MIN RELI
ARY
FS10UMA-5A FS10UMA-5A
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE
FS10UMA-5A
OUTLINE DRAWING
10.5MAX.
Dimensions in mm
4.5
3.2 7.0
1.3
16
3.6
12.5MIN.
3.8MAX.
1.0
0.8
2.54
2.54
0.5
2.6
GATE DRAIN SOURCE DRAIN
q 10V DRIVE q VDSS ............................................................................... 250V q rDS (ON) (MAX) .............................................................. 0.52 q ID......................................................................................... 10A
TO-220
APPLICATION CS Switch for CRT Display monitor
MAXIMUM RATINGS (Tc = 25C)
Symbol VDSS VGSS ID IDM IDA PD Tch Tstg -- Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 250 20 10 30 10 65 -55 ~ +150 -55 ~ +150 2.0 Unit V V A A A W C C g
Jan. 2000
L = 200H
4.5MAX.
MITSUBISHI Nch POWER MOSFET
IMIN PREL
. ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som
ARY
FS10UMA-5A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 250 -- -- 2.0 -- -- -- -- -- -- -- Typ. -- -- -- 3.0 0.40 2.00 9.0 950 90 25 20 25 150 40 1.5 -- Max. -- 0.1 1 4.0 0.52 2.60 -- -- -- -- -- -- -- -- 2.0 1.92
Unit V A mA V V S pF pF pF ns ns ns ns V C/W
Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50
-- -- -- -- --
IS = 5A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 100 MAXIMUM SAFE OPERATING AREA
7 5
POWER DISSIPATION PD (W)
80
DRAIN CURRENT ID (A)
3 2
101
7 5 3 2
tw = 10s 100s
60
40
100
7 5 3 2
1ms
20
TC = 25C Single Pulse 23 5 7 101 23 5 7 102
DC
0
10-1 0 50 100 150 200
7 23 5
CASE TEMPERATURE TC (C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 20
VGS = 20V 7V 6V 10V TC = 25C Pulse Test
OUTPUT CHARACTERISTICS (TYPICAL) 10
VGS = 20V 10V 6V 7V PD = 65W 4.5V 5V
DRAIN CURRENT ID (A)
16
DRAIN CURRENT ID (A)
8
12
5V
6
8
PD = 65W
4
TC = 25C Pulse Test 4V
4
4V
2
0
0
4
8
12
16
20
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Jan. 2000
MITSUBISHI Nch POWER MOSFET
e. tion. cifica t to chang c al spe t a fins are subje is no limit is e: Th tric Notice parame Som
P
MIN RELI
ARY
FS10UMA-5A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0
TC = 25C Pulse Test
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20
TC = 25C Pulse Test
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
16
0.8
12
ID = 20A
0.6
VGS = 10V
8
0.4
20V
4
10A 5A
0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 20 102
7 5 3 2
FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
16
TC = 25C
101
7 5 3 2 75C 125C
12
8
100
7 5 3 2 VDS = 10V Pulse Test 7 100 2 3 5 7 101 2 3 57
4
0
TC = 25C VDS = 10V Pulse Test
0
4
8
12
16
20
10-1
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104
7 5 3 2 5 3
SWITCHING CHARACTERISTICS (TYPICAL)
SWITCHING TIME (ns)
2
CAPACITANCE Ciss, Coss, Crss (pF)
103
7 5 3 2
Ciss
102
7 5 3 2
td(off) tf tr td(on) TCh = 25C VDD = 150V VGS = 10V RGEN = RGS = 50 7 100 2 3 5 7 101 2 3 57
102
7 5 3 2 TCh = 25C f = 1MHZ VGS = 0V
Coss
Crss
101
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2
101 7 5
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Jan. 2000
MITSUBISHI Nch POWER MOSFET
IMIN PREL
. ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som
ARY
FS10UMA-5A
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40
VGS = 0V Pulse Test TC = 25C 75C
GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
20
TCh = 25C ID = 10A
16
SOURCE CURRENT IS (A)
VDS = 50V 100V
32
12
24
125C
8
150V
16
4
8
0
0
20
40
60
80
100
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101
VGS = 10V 7 ID = 1/2ID 5 Pulse Test 3 2
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
0 50 100 150
4.0
3.0
100
7 5 3 2
2.0
1.0
10-1
-50
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102
7 5 3 2
1.2
101
7 5 3 D = 1.0 2 0.5 7 0.2 5 3 2 0.01 0.02 0.1 0.05 PDM Single Pulse
tw T D= tw T
1.0
0.8
100
0.6
0.4
-50
0
50
100
150
10-1 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s)
Jan. 2000
CHANNEL TEMPERATURE Tch (C)

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